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Tcursor® series: Ts-Nb10

 Characteristics
  • Melting point: 20°C
  • Vapor pressure: 0.1Torr (50°C)
  • Very high vapor pressure
  • Liquid at room temperature
  • High reactivity with oxygen 
  • Excellent step coverage

Thermal Properties

  

Ts-Nb10, precursor, semiconductor, thermal propertiesTs-Nb10, precursor, thermal properties, semiconductor, deposition, targets

Thermal CVD with O2

  

Ts-Nb10, precursor, semiconductorTs-Nb10