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Tcursor® series: Ts-Ta7

 Characteristics
  • Melting point: 11°C
  • Vapor pressure: 0.1Torr (46°C)
  • Very high vapor pressure
  • High thermal stability
  • Liquid at room temperature
  • Very high reactivity with oxygen

Thermal Properties

  

precusor, precursor, semiconductor, thermal properties, Ts-Ta7

Thermal CVD with O2

  

precursor, thermal CVD, semiconductor, deposition, oxygen