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Semiconductor Targets
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HOME
ABOUT US
Mission Statement
Quality
History
Career Opportunities
Suppliers
Supplier Code of Conduct
Purchase Terms and Conditions
Legal
Privacy Statement
Terms of Use
OUR PRODUCTS
Semiconductor Targets
Aluminum
Copper
Tantalum
Titanium
Other
Powdered Metals
Chemical Precursors
RuDER® for Ru and RuO2
Rudense® for Area Selective Deposition
Ts-Ir5
Ts-Co10
Ts-Ti9
Ts-Ta7
Ts-Nb10
Ts-Hf3
Ts-Zr2
Ts-Bi6
Ts-Al4
SiTBAS
SiTBIS
TD-50
TG-4E
Flat Panel Display and Solar Targets
Organic Light Emitting Diode
Sales Terms and Conditions
Conflict Minerals
CONTACT US
Information Request Form
OUR PRODUCTS
Tcursor® series: Ts-Zr2
HOME
OUR PRODUCTS
Chemical Precursors
Ts-Zr2
Semiconductor Targets
Aluminum
Copper
Tantalum
Titanium
Other
Powdered Metals
Chemical Precursors
RuDER® for Ru and RuO2
Rudense® for Area Selective Deposition
Ts-Ir5
Ts-Co10
Ts-Ti9
Ts-Ta7
Ts-Nb10
Ts-Hf3
Ts-Zr2
Ts-Bi6
Ts-Al4
SiTBAS
SiTBIS
TD-50
TG-4E
Flat Panel Display and Solar Targets
Organic Light Emitting Diode
Sales Terms and Conditions
Conflict Minerals
Characteristics
Melting point: -20°C
Vapor pressure: 0.1Torr (77°C)
Decomposition temperature: 240°C
Good volatility
Higher thermal stability than Zr(NEtMe)
4
Liquid at room temperature
Volatility & Thermal Stability
Thermal CVD with O
2